A Physics-Based Model for Fast Recovery Diodes with Lifetime Control and Emitter Efficiency Reduction
 M. Valdinoci, L. Colalongo, A. Pellegrini, and M. Rudan, "Analysis of
Conductivity Degradation in Gold/Platinum Doped Silicon," IEEE Trans.
Electron Devices, vol. 43. No. 12, pp. 2269-2275. Dec 1996.
 V. Raineri, G. Fallica, S. Libertino, "Lifetime control in silicon devices
by voids induced by He ion implantation," Journal of Applied Physics 79
(12), 15, June 1996.
 B. J. Baliga, "Analysis of a High-Voltage Merged p-i-n/Schottky (MPS)
Rectifier, " IEEE Electron Device Letters, Vol. EDL-8, No. 9, pp. 407,
 Heinrich Schlangenotto, Josef Sefarin, Friedhelm Sawitzki, Helmut
Maeder, "Improved Recovery of Fast Power Diodes with Self-Adjusting
p Emitter Efficiency, " IEEE Electron Device Letters, Vol. 10, No. 7, July
1989, pp. 322-324.
 Manoj Mehrota and B. J. Baliga, "Comparison of High Voltage Power
Rectifier Structures," Proc. ISPSD, 1993, pp.199- 204.
 H. Schlangenotto, M. Fullmann, "A Hybrid FAST Recovery Diode with
strongly Improved Reverse Recovery," 5th EPE Conference, Brighton, U.
K. 1993, pp. 185-190.
 M.T. Rahimo and, N.Y.A. Shammans, "Test and Characterization of
Modern Fast Power Diodes for High Speed Switching Applications,"
IEEE Conference on Power Electronics and Variable Speed Drives,
September 2000. pp. 103-108.
 S. P. Pendharkar, M. Trivedi, K. Shenai, "Dynamics of reverse recovery
of high-power P-i-N diodes," IEEE Trans. on Electron Devices, vol. 43,
no. 1, pp. 142-149, 1996.
 F. Cappelluti, F.Bonani, M.Furno, G.Ghione, R.Carta, L. Bellemo, C.
Boc-chiolaand, L. Merlin, "Physics-based mixed-mode reverse recovery
modeling and optimization of Si PiN and MPS fast recovery
diodes,"Proc. of ISPS'04, Prague, pp. 67-73.