Fabrication of Cylindrical Silicon Nanowire-Embedded Field Effect Transistor Using Al2O3 Transfer Layer
In order to manufacture short gap single Si nanowire
(NW) field effect transistor (FET) by imprinting and transferring
method, we introduce the method using Al2O3 sacrificial layer. The
diameters of cylindrical Si NW addressed between Au electrodes by
dielectrophoretic (DEP) alignment method are controlled to 106, 128,
and 148 nm. After imprinting and transfer process, cylindrical Si NW
is embedded in PVP adhesive and dielectric layer. By curing
transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si
substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication
was completed. As the diameter of embedded Si NW increases, the
mobility of FET increases from 80.51 to 121.24 cm2/V·s and the
threshold voltage moves from –7.17 to –2.44 V because the ratio of
surface to volume gets reduced.
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