In this paper, FinFET devices are analyzed with
emphasis on sub-threshold leakage current control. This is achieved
through proper biasing of the back gate, and through the use of
asymmetric work functions for the four terminal FinFET devices. We
are also examining different configurations of multiplexers and XOR
gates using transistors of symmetric and asymmetric work functions.
Based on extensive characterization data for MUX circuits, our
proposed configuration using symmetric devices lead to leakage
current and delay improvements of 65% and 47% respectively
compared to results in the literature. For XOR gates, a 90%
improvement in the average leakage current is achieved by using
asymmetric devices. All simulations are based on a 25nm FinFET
technology using the University of Florida UFDG model.
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