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New Design of a Broadband Microwave Zero Bias Power Limiter
In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.
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[1] D. Shiffler, T.K. Statom, T.W. Hussey, O.Zhou, P. Mardahl, “High power microwave source”, in Modern Microwave and MillimeterWave Power Electronics, pp. 691-730, 2005,Wiley Interscience.
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[11] Sandeep Chaturvedi, G. Sai Saravanan, Mahadeva Bhat K., Sangam Bhalke "MESFET process based planar Schottky diode and its application to passive power limiters" 978-1-4799-2501-8/13/$31.00 ©2013 IEEE.
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[14] Data Sheet of Schottky diode HSMS-282x “Surface mount RF Schottky barrier diodes”, Avago Technologies.
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