This paper proposed a silicon controller rectifier (SCR)
based ESD protection device to protect low voltage ESD for integrated
circuit. The proposed ESD protection device has low trigger voltage
and high holding voltage compared with conventional SCR-based
ESD protection devices. The proposed ESD protection circuit is
verified and compared by TCAD simulation. This paper verified
effective low voltage ESD characteristics with low trigger voltage of
5.79V and high holding voltage of 3.5V through optimization
depending on design variables (D1, D2, D3 and D4).
 Ming-Dou Ker, Cheng-Cheng Yen: “Investigation and Design of
On-Chip Power-Rail ESD Clamp Circuits Without Suffering
Latchup-Like Failure During System-Level ESD Test,” IEEE Journal of
Solid-State Circuit, vol.43, no.11, pp. 2533-2545, November 2008.
 Mergens, Markus P.J: "ESD Protection Considerations in Advanced
High-Voltage Technologies for Automotive"Proc. 28thEOS/ESD Symp.,
Westin La Paloma Tucson, Arizona, USA, pp. 54-63, September 2006.
 Yong-Seo Koo, Kwang-Yeob Lee, Kui-Dong Kim, and Jong-ki Kwon:
“Design of SCR-based ESD Protection Device for Power Clamp using
Deep-Submicron CMOS Technology,”Microelectronics Journal, vol. 40,
no. 6, pp. 1007-1012, June 2009.
 V. Vashchenko, A. Concannon, M. terBeek, and P. Hopper:“High
holding voltage cascoded LVTSCR structures for 5.5-V tolerant ESD
protection clamps”, IEEE Trans. on Device and Materials Reliability, vol.
4, no. 2, pp. 273-280, 2004.
 Yong-Seo Koo, Kwang-Yeob Lee, Kui-Dong Kim, and Jong-Ki Kwon:
“The design of high holding voltage SCR for whole-chip ESD protection”
IEICE Electronics Express, vol. 5, no. 17, pp. 624-630, September 2008.
 Oleg Semenov, HosseinSarbishaei and ManojSachdev:ESD Protection
Device and Circuit Design for Advanced CMOS Technologies, Springer,