Open Science Research Excellence
@article{(International Science Index):,
  title    = {Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT)},
  author    = {Sangeeta Singh and  Pankaj Kumar and  P. N. Kondekar},
  country   = {India},
  institution={Indian Institute of Information Technology, Design and Manufacturing, Jabalpur},
  abstract  = {In this paper, the transient device performance analysis
of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been
evaluated. 3-D Bohm Quantum Potential (BQP) transport device
simulation has been used to evaluate the delay and power dissipation
performance. GI-JLT has a number of desirable device parameters
such as reduced propagation delay, dynamic power dissipation,
power and delay product, intrinsic gate delay and energy delay
product as compared to Gate-all-around transistors GAA-JLT. In
addition to this, various other device performance parameters namely,
on/off current ratio, short channel effects (SCE), transconductance
Generation Factor (TGF) and unity gain cut-off frequency (fT ) and
subthreshold slope (SS) of the GI-JLT and GAA-JLT have been
analyzed and compared. GI-JLT shows better device performance
characteristics than GAA-JLT for low power and high frequency
applications, because of its larger gate electrostatic control on the
device operation.
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {8},
  number    = {10},
  year      = {2014},
  pages     = {1648 - 1652},
  ee        = {},
  url       = {},
  bibsource = {},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 94, 2014},