Open Science Research Excellence
%0 Journal Article
%A N. Massoum and  A. Guen. Bouazza and  B. Bouazza and  A. El Ouchdi
%D 2015 
%J  International Journal of Mechanical, Aerospace, Industrial, Mechatronic and Manufacturing Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 97, 2015
%T Modeling the Transport of Charge Carriers in the Active Devices MESFET, Based of GaInP by the Monte Carlo Method
%U http://waset.org/publications/10000556
%V 97
%X The progress of industry integrated circuits in recent
years has been pushed by continuous miniaturization of transistors.
With the reduction of dimensions of components at 0.1 micron and
below, new physical effects come into play as the standard simulators
of two dimensions (2D) do not consider. In fact the third dimension
comes into play because the transverse and longitudinal dimensions
of the components are of the same order of magnitude. To describe
the operation of such components with greater fidelity, we must
refine simulation tools and adapted to take into account these
phenomena. After an analytical study of the static characteristics of
the component, according to the different operating modes, a
numerical simulation is performed of field-effect transistor with
submicron gate MESFET GaInP. The influence of the dimensions of
the gate length is studied. The results are used to determine the
optimal geometric and physical parameters of the component for their
specific applications and uses.

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