Open Science Research Excellence
@article{(International Science Index):,
  title    = {The Effect of CPU Location in Total Immersion of Microelectronics},
  author    = {A. Almaneea and  N. Kapur and  J. L. Summers and  H. M. Thompson},
  country   = {United Kingdom},
  institution={University of Leeds},
  abstract  = {Meeting the growth in demand for digital services
such as social media, telecommunications, and business and cloud
services requires large scale data centres, which has led to an increase
in their end use energy demand. Generally, over 30% of data centre
power is consumed by the necessary cooling overhead. Thus energy
can be reduced by improving the cooling efficiency. Air and liquid
can both be used as cooling media for the data centre. Traditional
data centre cooling systems use air, however liquid is recognised as a
promising method that can handle the more densely packed data
centres. Liquid cooling can be classified into three methods; rack heat
exchanger, on-chip heat exchanger and full immersion of the
microelectronics. This study quantifies the improvements of heat
transfer specifically for the case of immersed microelectronics by
varying the CPU and heat sink location. Immersion of the server is
achieved by filling the gap between the microelectronics and a water
jacket with a dielectric liquid which convects the heat from the CPU
to the water jacket on the opposite side. Heat transfer is governed by
two physical mechanisms, which is natural convection for the fixed
enclosure filled with dielectric liquid and forced convection for the
water that is pumped through the water jacket. The model in this
study is validated with published numerical and experimental work
and shows good agreement with previous work. The results show that
the heat transfer performance and Nusselt number (Nu) is improved
by 89% by placing the CPU and heat sink on the bottom of the
microelectronics enclosure.
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {9},
  number    = {4},
  year      = {2015},
  pages     = {454 - 457},
  ee        = {},
  url       = {},
  bibsource = {},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 100, 2015},