Open Science Research Excellence
@article{(International Science Index):http://waset.org/publications/10003936,
  title    = {Very High Speed Data Driven Dynamic NAND Gate at 22nm High K Metal Gate Strained Silicon Technology Node},
  author    = {Shobha Sharma and  Amita Dev},
  country   = {India},
  institution={IGDTUW},
  abstract  = {Data driven dynamic logic is the high speed dynamic circuit with low area. The clock of the dynamic circuit is removed and data drives the circuit instead of clock for precharging purpose. This data driven dynamic nand gate is given static forward substrate biasing of Vsupply/2 as well as the substrate bias is connected to the input data, resulting in dynamic substrate bias. The dynamic substrate bias gives the shortest propagation delay with a penalty on the power dissipation. Propagation delay is reduced by 77.8% compared to the normal reverse substrate bias Data driven dynamic nand. Also dynamic substrate biased D3nand’s propagation delay is reduced by 31.26% compared to data driven dynamic nand gate with static forward substrate biasing of Vdd/2. This data driven dynamic nand gate with dynamic body biasing gives us the highest speed with no area penalty and finds its applications where power penalty is acceptable. Also combination of Dynamic and static Forward body bias can be used with reduced propagation delay compared to static forward biased circuit and with comparable increase in an average power. The simulations were done on hspice simulator with 22nm High-k metal gate strained Si technology HP models of Arizona State University, USA.},
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {10},
  number    = {1},
  year      = {2016},
  pages     = {157 - 162},
  ee        = {http://waset.org/publications/10003936},
  url       = {http://waset.org/Publications?p=109},
  bibsource = {http://waset.org/Publications},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 109, 2016},
}