Open Science Research Excellence
Shobha Sharma and  Amita Dev,  Very High Speed Data Driven Dynamic NAND Gate at 22nm High K Metal Gate Strained Silicon Technology Node.   journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. January 2016, vol. 109(1). 157 - 162[viewed 21 March 2019]. Available from: http://waset.org/publications/10003936.