Open Science Research Excellence
@article{(International Science Index):http://waset.org/publications/10004147,
  title    = {Capacitance Models of AlGaN/GaN High Electron Mobility Transistors},
  author    = {A. Douara and  N. Kermas and  B. Djellouli},
  country   = {Algeria},
  institution={Dr Tahar Moulay University},
  abstract  = {In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.
},
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {10},
  number    = {3},
  year      = {2016},
  pages     = {420 - 423},
  ee        = {http://waset.org/publications/10004147},
  url       = {http://waset.org/Publications?p=111},
  bibsource = {http://waset.org/Publications},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 111, 2016},
}