Open Science Research Excellence
%0 Journal Article
%A Anwar H. Jarndal and  Ahmed S. Elwakil
%D 2016 
%J  International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 115, 2016
%T Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications
%V 115
%X In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.
%P 853 - 857