Excellence in Research and Innovation for Humanity
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@article{(International Science Index):http://waset.org/publications/10006167,
  title    = {Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique},
  author    = {S. Zhuiykov and  Zh. Hai and  H. Xu and  C. Xue},
  country   = {Korea, Republic Of},
  institution={Ghent University Global Campus},
  abstract  = {Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.},
    journal   = {International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering},  volume    = {11},
  number    = {1},
  year      = {2017},
  pages     = {46 - 49},
  ee        = {http://waset.org/publications/10006167},
  url       = {http://waset.org/Publications?p=121},
  bibsource = {http://waset.org/Publications},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 121, 2017},
}