Excellence in Research and Innovation for Humanity
%0 Journal Article
%A S. Zhuiykov and  Zh. Hai and  H. Xu and  C. Xue
%D 2017 
%J  International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 121, 2017
%T Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique
%U http://waset.org/publications/10006167
%V 121
%X Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.
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