Open Science Research Excellence
%0 Journal Article
%A Ahmad Al-Omari and  Osama Khreis and  Ahmad M. K. Dagamseh and  Abdullah Ababneh and  Kevin Lear
%D 2017 
%J  International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 132, 2017
%T Improved Small-Signal Characteristics of Infrared 850 nm Top-Emitting Vertical-Cavity Lasers
%V 132
%X High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f-3dB) of 14 GHz and a resonance frequency (fR) of 9.5 GHz at a bias current density (Jbias) of only 4.3 kA/cm2, which corresponds to an improved f-3dB2/Jbias ratio of 44 GHz2/kA/cm2. At higher and lower bias current densities, the f-3dB2/ Jbias ratio decreased to about 30 GHz2/kA/cm2 and 18 GHz2/kA/cm2, respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f-3dB/ fR ratio of 1.41±10% over the whole range of the bias current (1.3Ith to 6.2Ith). The devices also demonstrated a maximum modulation bandwidth (f-3dB max) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.
%P 1223 - 1226