Open Science Research Excellence
@article{(International Science Index):http://waset.org/publications/10009637,
  title    = {Design of Low Noise Amplifiers for 10 GHz Application},
  author    = {Makesh Iyer and  T. Shanmuganantham},
  country   = {India},
  institution={Pondicherry University},
  abstract  = {This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.
},
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {12},
  number    = {10},
  year      = {2018},
  pages     = {711 - 717},
  ee        = {http://waset.org/publications/10009637},
  url       = {http://waset.org/Publications?p=142},
  bibsource = {http://waset.org/Publications},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 142, 2018},
}