Open Science Research Excellence
Z. X. Chen and  N. Singh and  D.-L. Kwong,  Vertical Silicon Nanowire MOSFET With A Fully-Silicided (FUSI) NiSi2 Gate.   journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. September 2011, vol. 57(9). 1229 - 1231[viewed 18 April 2019]. Available from: http://waset.org/publications/14024.