Open Science Research Excellence
Ashwani K. Rana and  Narottam Chand and  Vinod Kapoor,  Gate Tunnel Current Calculation for NMOSFET Based on Deep Sub-Micron Effects.   journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. March 2009, vol. 27(3). 565 - 573[viewed 25 April 2019]. Available from: