Open Science Research Excellence
@article{(International Science Index):,
  title    = {Semi Classical Three-Valley Monte Carlo Simulation Analysis of Steady-State and Transient Electron Transport within Bulk Ga0.38In0.62P},
  author    = {N. Massoum and  B. Bouazza and  H. Tahir and  C. Sayah and  A. Guen Bouazza},
  country   = {},
  abstract  = {to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material
    journal   = {International Journal of Mathematical, Computational, Physical, Electrical and Computer Engineering},  volume    = {6},
  number    = {10},
  year      = {2012},
  pages     = {1429 - 1431},
  ee        = {},
  url       = {},
  bibsource = {},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 70, 2012},