Open Science Research Excellence
@article{(International Science Index):http://waset.org/publications/15296,
  title    = {A Novel Nano-Scaled SRAM Cell},
  author    = {Arash Azizi Mazreah and  Mohammad Reza Sahebi and  Mohammad T. Manzuri Shalmani},
  country   = {},
  institution={},
  abstract  = {To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.
},
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {4},
  number    = {5},
  year      = {2010},
  pages     = {781 - 783},
  ee        = {http://waset.org/publications/15296},
  url       = {http://waset.org/Publications?p=41},
  bibsource = {http://waset.org/Publications},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 41, 2010},
}