Open Science Research Excellence
%0 Journal Article
%A Q. Zafar and  R. Akram and  Kh.S. Karimov and  T.A. Khan and  M. Farooq and  M.M. Tahir
%D 2011 
%J  International Journal of Mathematical, Computational, Physical, Electrical and Computer Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 58, 2011
%T Temperature Variation Effects on I-V Characteristics of Cu-Phthalocyanine based OFET
%U http://waset.org/publications/15695
%V 58
%X In this study we present the effect of elevated
temperatures from 300K to 400K on the electrical properties of
copper Phthalocyanine (CuPc) based organic field effect transistors
(OFET). Thin films of organic semiconductor CuPc (40nm) and
semitransparent Al (20nm) were deposited in sequence, by vacuum
evaporation on a glass substrate with previously deposited Ag source
and drain electrodes with a gap of 40 μm. Under resistive mode of
operation, where gate was suspended it was observed that drain
current of this organic field effect transistor (OFET) show an
increase with temperature. While in grounded gate condition metal
(aluminum) – semiconductor (Copper Phthalocyanine) Schottky
junction dominated the output characteristics and device showed
switching effect from low to high conduction states like Zener diode
at higher bias voltages. This threshold voltage for switching effect
has been found to be inversely proportional to temperature and shows
an abrupt decrease after knee temperature of 360K. Change in
dynamic resistance (Rd = dV/dI) with respect to temperature was
observed to be -1%/K.
%P 1593 - 1597