Open Science Research Excellence
%0 Journal Article
%A Shibesh Dutta and  Sivaramakrishnan R. and  Sundar Gopalan and  Balakrishnan Shankar
%D 2009 
%J  International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 34, 2009
%T Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs
%U http://waset.org/publications/16005
%V 34
%X MOSCAPs of various combinations of Hafnium
oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized.
The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed
hard breakdown and negligible degradation of reliability under stress.
%P 550 - 552