Scholarly Research Excellence
@article{(International Science Index):http://waset.org/publications/17367,
  title    = {A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices},
  author    = {A. Karsenty and  A. Chelly},
  country   = {},
  institution={},
  abstract  = {Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.
},
    journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering},  volume    = {7},
  number    = {1},
  year      = {2013},
  pages     = {66 - 70},
  ee        = {http://waset.org/publications/17367},
  url       = {http://waset.org/Publications?p=73},
  bibsource = {http://waset.org/Publications},
  issn      = {eISSN:1307-6892},
  publisher = {World Academy of Science, Engineering and Technology},
  index     = {International Science Index 73, 2013},
}