Open Science Research Excellence
%0 Journal Article
%A N. Dahbi and  M. Daoudi and  A.Belghachi
%D 2011 
%J  International Journal of Mathematical and Computational Sciences
%B World Academy of Science, Engineering and Technology
%I International Science Index 55, 2011
%T Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te
%V 55
%X The present work deals with the calculation of
transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in
degenerate case. Due to their energy-band structure, this material
becomes degenerate at moderate doping densities, which are around
1015 cm-3, so that the usual Maxwell-Boltzmann approximation is
inaccurate in the determination of transport parameters. This problem
is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic
behavior of the bands may be approximated by the Kane model. The
Monte Carlo (MC) simulation is used here to determinate transport
parameters: drift velocity, mean energy and drift mobility versus
electric field and the doped densities. The obtained results are in
good agreement with those extracted from literature.
%P 950 - 953