N. Dahbi and M. Daoudi and A.Belghachi Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te
950 - 953
2011
5
7
International Journal of Mathematical, Computational, Physical, Electrical and Computer Engineering http://waset.org/publications/1860
http://waset.org/publications/55
World Academy of Science, Engineering and Technology
The present work deals with the calculation of
transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in
degenerate case. Due to their energyband structure, this material
becomes degenerate at moderate doping densities, which are around
1015 cm3, so that the usual MaxwellBoltzmann approximation is
inaccurate in the determination of transport parameters. This problem
is faced by using FermiDirac (FD) statistics, and the nonparabolic
behavior of the bands may be approximated by the Kane model. The
Monte Carlo (MC) simulation is used here to determinate transport
parameters drift velocity, mean energy and drift mobility versus
electric field and the doped densities. The obtained results are in
good agreement with those extracted from literature.
International Science Index 55, 2011