Open Science Research Excellence
%0 Journal Article
%A Arash Azizi Mazreah and  Mohammad T. Manzuri Shalmani and  Hamid Barati and  Ali Barati
%D 2008 
%J  International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 15, 2008
%T A Novel Four-Transistor SRAM Cell with Low Dynamic Power Consumption
%U http://waset.org/publications/7725
%V 15
%X This paper presents a novel CMOS four-transistor
SRAM cell for very high density and low power embedded SRAM
applications as well as for stand-alone SRAM applications. This cell
retains its data with leakage current and positive feedback without
refresh cycle. The new cell size is 20% smaller than a conventional
six-transistor cell using same design rules. Also proposed cell uses
two word-lines and one pair bit-line. Read operation perform from
one side of cell, and write operation perform from another side of
cell, and swing voltage reduced on word-lines thus dynamic power
during read/write operation reduced. The fabrication process is fully
compatible with high-performance CMOS logic technologies,
because there is no need to integrate a poly-Si resistor or a TFT load.
HSPICE simulation in standard 0.25μm CMOS technology confirms
all results obtained from this paper.
%P 351 - 355