Open Science Research Excellence
%0 Journal Article
%A Arash Azizi Mazreah and  Mohammad T. Manzuri Shalmani and  Hamid Barati and  Ali Barati and  Ali Sarchami
%D 2008 
%J  International Journal of Computer, Electrical, Automation, Control and Information Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 15, 2008
%T A Low Power SRAM Base on Novel Word-Line Decoding
%U http://waset.org/publications/931
%V 15
%X This paper proposes a low power SRAM based on
five transistor SRAM cell. Proposed SRAM uses novel word-line
decoding such that, during read/write operation, only selected cell
connected to bit-line whereas, in conventional SRAM (CV-SRAM),
all cells in selected row connected to their bit-lines, which in turn
develops differential voltages across all bit-lines, and this makes
energy consumption on unselected bit-lines. In proposed SRAM
memory array divided into two halves and this causes data-line
capacitance to reduce. Also proposed SRAM uses one bit-line and
thus has lower bit-line leakage compared to CV-SRAM.
Furthermore, the proposed SRAM incurs no area overhead, and has
comparable read/write performance versus the CV-SRAM.
Simulation results in standard 0.25μm CMOS technology shows in
worst case proposed SRAM has 80% smaller dynamic energy
consumption in each cycle compared to CV-SRAM. Besides, energy
consumption in each cycle of proposed SRAM and CV-SRAM
investigated analytically, the results of which are in good agreement
with the simulation results.
%P 649 - 653