Excellence in Research and Innovation for Humanity
%0 Journal Article
%A A. Hamdoune and  M. Abdelmoumene and  A. Hamroun
%D 2013 
%J  International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering
%B World Academy of Science, Engineering and Technology
%I International Science Index 73, 2013
%T Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT
%U http://waset.org/publications/9996851
%V 73
%X The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

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