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A. Hamdoune and  M. Abdelmoumene and  A. Hamroun,  Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT.   journal   = {International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. January 2013, vol. 73(1). 96 - 100[viewed 23 July 2018]. Available from: http://waset.org/publications/9996851.