A. Hamdoune and M. Abdelmoumene and A. Hamroun Static and Dynamic Characteristics of an Appropriated and Recessed nGaNAlGaNGaN HEMT
96 - 100
2013
7
1
International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering http://waset.org/publications/9996851
http://waset.org/publications/73
World Academy of Science, Engineering and Technology
The objective of this paper is to simulate static IV and dynamic characteristics of an appropriated and recessed nGaNAlxGa1xNGaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drainsource current (lDS) as a function of the drainsource voltage (VDS) for different values of the gatesource voltage (VGS), and the drainsource current (lDS) depending on the gatesource voltage (VGS) for a drainsource voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cutoff frequency and the maximum oscillation frequency for different temperatures.
We obtain a high draincurrent equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinchoff voltage (VGS0) of 53.5 V, a transconductance greater than 600 mSmm, a cutoff frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.
International Science Index 73, 2013