Open Science Research Excellence

Open Science Index

Commenced in January 2007 Frequency: Monthly Edition: International Paper Count: 5

5
10005460
Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
Abstract:
The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by metal organic chemical vapor deposition (MOCVD). Since this process reaches its limits in case of very high aspect ratios, the use of alternatives such as the atomic layer deposition (ALD) is possible, requiring the extension of existing coating systems. However, it is an unsolved question to what extent MOCVD can achieve results similar as an ALD process. In this context, this work addresses the characterization of a metal organic vapor deposition of titanium nitride. Based on the current state of the art, the film properties coating thickness, sheet resistance, resistivity, stress and chemical composition are considered. The used setting parameters are temperature, plasma gas ratio, plasma power, plasma treatment time, deposition time, deposition pressure, number of cycles and TDMAT flow. The derived process instructions for unstructured wafers and inside a structure with high aspect ratio include lowering the process temperature and increasing the number of cycles, the deposition and the plasma treatment time as well as the plasma gas ratio of hydrogen to nitrogen (H2:N2). In contrast to the current process configuration, the deposited titanium nitride (TiN) layer is more uniform inside the entire test structure. Consequently, this paper provides approaches to employ the MOCVD for structures with increasing aspect ratios.
4
10004648
Effect of Pack Aluminising Conditions on βNiAl Coatings
Abstract:

In this study, nickel aluminide coatings were deposited onto CMSX-4 single crystal superalloy and pure Ni substrates by using in-situ chemical vapour deposition (CVD) technique. The microstructural evolutions and coating thickness (CT) were studied upon the variation of processing conditions i.e. time and temperature. The results demonstrated (under identical conditions) that coating formed on pure Ni contains no substrate entrapments and have lower CT in comparison to one deposited on the CMSX-4 counterpart. In addition, the interdiffusion zone (IDZ) of Ni substrate is a γ’-Ni3Al in comparison to the CMSX-4 alloy that is βNiAl phase. The higher CT on CMSX-4 superalloy is attributed to presence of γ-Ni/γ’-Ni3Al structure which contains ~ 15 at.% Al before deposition (that is already present in superalloy). Two main deposition parameters (time and temperature) of the coatings were also studied in addition to standard comparison of substrate effects. The coating formation time was found to exhibit profound effect on CT, whilst temperature was found to change coating activities. In addition, the CT showed linear trend from 800 to 1000 °C, thereafter reduction was observed. This was attributed to the change in coating activities.

3
10003732
Futuristic Black Box Design Considerations and Global Networking for Real Time Monitoring of Flight Performance Parameters
Abstract:
The aim of this research paper is to conceptualize, discuss, analyze and propose alternate design methodologies for futuristic Black Box for flight safety. The proposal also includes global networking concepts for real time surveillance and monitoring of flight performance parameters including GPS parameters. It is expected that this proposal will serve as a failsafe real time diagnostic tool for accident investigation and location of debris in real time. In this paper, an attempt is made to improve the existing methods of flight data recording techniques and improve upon design considerations for futuristic FDR to overcome the trauma of not able to locate the block box. Since modern day communications and information technologies with large bandwidth are available coupled with faster computer processing techniques, the attempt made in this paper to develop a failsafe recording technique is feasible. Further data fusion/data warehousing technologies are available for exploitation.
2
10001006
Preparation and Cutting Performance of Boron-Doped Diamond Coating on Cemented Carbide Cutting Tools with High Cobalt Content
Abstract:

Chemical vapor deposition (CVD) diamond coated cutting tool has excellent cutting performance, it is the most ideal tool for the processing of nonferrous metals and alloys, composites, nonmetallic materials and other difficult-to-machine materials efficiently and accurately. Depositing CVD diamond coating on the cemented carbide with high cobalt content can improve its toughness and strength, therefore, it is very important to research on the preparation technology and cutting properties of CVD diamond coated cemented carbide cutting tool with high cobalt content. The preparation technology of boron-doped diamond (BDD) coating has been studied and the coated drills were prepared. BDD coating were deposited on the drills by using the optimized parameters and the SEM results show that there are no cracks or collapses in the coating. Cutting tests with the prepared drills against the silumin and aluminum base printed circuit board (PCB) have been studied. The results show that the wear amount of the coated drill is small and the machined surface has a better precision. The coating does not come off during the test, which shows good adhesion and cutting performance of the drill.

1
10164
Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition
Abstract:

The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.

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