|Commenced in January 2007||Frequency: Monthly||Edition: International||Paper Count: 1|
Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-Vt transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.