Open Science Research Excellence

Open Science Index

Commenced in January 2007 Frequency: Monthly Edition: International Paper Count: 11

11
10008991
A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics
Abstract:
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.
10
10008332
A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage
Abstract:
In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.
9
10003785
Average Secrecy Mutual Information of the Non-Identically Independently Distributed Hoyt Fading Wireless Channels
Abstract:
In this paper, we consider a non-identically independently distributed (non-i.i.d.) Hoyt fading single-input multiple-out put (SIMO) channel, where the transmitter sends some confidential information to the legitimate receiver in presence of an eavesdropper. We formulated the probability of non-zero secrecy mutual information; secure outage probability and average secrecy mutual information (SMI) for the SIMO wireless communication system. The calculation has been carried out using small limit argument approximation (SLAA) on zeroth-order modified Bessel function of first kind. In our proposed model, an eavesdropper observes transmissions of information through another Hoyt fading channel. First, we derived the analytical expression for non-zero secrecy mutual information. Then, we find the secure outage probability to investigate the outage behavior of the proposed model. Finally, we find the average secrecy mutual information. We consider that the channel state information (CSI) is known to legitimate receiver.
8
10001846
SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp
Abstract:
In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.
7
10000355
SCR-Based Advanced ESD Protection Device for Low Voltage Application
Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

6
9998659
Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics
Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

5
16494
Porcelain Insulator Performance under Different Condition of Installation around Aligarh
Abstract:

Modern Society is strongly dependent on a reliable power supply. The availability of cheap and reliable supply of electrical energy is an indicator of societal welfare. Uninterrupted reliable operation of a modern power system depends to a great extent on reliable and satisfactory performance of insulators under different environmental conditions. This paper reports result of natural pollution tests that have been done at sites around city of Aligarh (India). Flashover voltage per insulation distance (FOVUID) of porcelain disc insulator for different pH values, ESDD has been recorded for proper correlation between electrical and chemical parameters. The pH of the contaminants has been suggested to be an effective pollution severity indicator and may be used as a diagnostic parameter for proper maintenance of porcelain insulators.

4
15203
Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process
Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

3
7827
Design of Novel SCR-based ESD Protection Device for I/O Clamp in BCD Process
Abstract:
In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.
2
327
Industrial Compressor Anti-Surge Computer Control
Abstract:
The paper presents a compressor anti-surge control system, that results in maximizing compressor throughput with pressure standard deviation reduction, increased safety margin between design point and surge limit line and avoiding possible machine surge. Alternative control strategies are presented.
1
3240
A Security Model of Voice Eavesdropping Protection over Digital Networks
Abstract:

The purpose of this research is to develop a security model for voice eavesdropping protection over digital networks. The proposed model provides an encryption scheme and a personal secret key exchange between communicating parties, a so-called voice data transformation system, resulting in a real-privacy conversation. The operation of this system comprises two main steps as follows: The first one is the personal secret key exchange for using the keys in the data encryption process during conversation. The key owner could freely make his/her choice in key selection, so it is recommended that one should exchange a different key for a different conversational party, and record the key for each case into the memory provided in the client device. The next step is to set and record another personal option of encryption, either taking all frames or just partial frames, so-called the figure of 1:M. Using different personal secret keys and different sets of 1:M to different parties without the intervention of the service operator, would result in posing quite a big problem for any eavesdroppers who attempt to discover the key used during the conversation, especially in a short period of time. Thus, it is quite safe and effective to protect the case of voice eavesdropping. The results of the implementation indicate that the system can perform its function accurately as designed. In this regard, the proposed system is suitable for effective use in voice eavesdropping protection over digital networks, without any requirements to change presently existing network systems, mobile phone network and VoIP, for instance.

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