Open Science Research Excellence

Open Science Index

Commenced in January 2007 Frequency: Monthly Edition: International Paper Count: 6

6
10006842
Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell
Abstract:

This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.

5
9998912
Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells
Abstract:

This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.

4
16331
Characterization of the Energy Band Diagram of Fabricated SnO2/CdS/CdTe Thin Film Solar Cells
Abstract:

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

3
2450
Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode
Abstract:
Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.
2
2306
Investigation of Temperature-Dependent Electrical Properties of Tc-CuPc: PCBM Bulk Heterojunction (BHJ) under Dark Conditions
Abstract:

An organic bulk heterojunction (BHJ) was fabricated using a blended film containing Copper (II) tetrakis(4-acumylphenoxy) phthalocyanine (Tc-CuPc) along with [6,6]-Phenyl C61 butyric acid methyl ester (PCBM). Weight ratio between Tc-CuPc and PCBM was 1:1. The electrical properties of Tc-CuPc: PCBM BHJ were examined. Rectifying nature of the BHJ was displayed by current-voltage (I-V) curves, recorded in dark and at various temperatures. At low voltages, conduction was ohmic succeeded by space-charge limiting current (SCLC) conduction at higher voltages in which exponential trap distribution was dominant. Series resistance, shunt resistance, ideality factor, effective barrier height and mobility at room temperature were found to be 526 4, 482 k4, 3.7, 0.17 eV and 2×10-7 cm2V-1s-1 respectively. Temperature effect towards different BHJ parameters was observed under dark condition.

1
3261
Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel
Abstract:
n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.
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