Open Science Research Excellence

Open Science Index

Commenced in January 2007 Frequency: Monthly Edition: International Paper Count: 4

4
10008991
A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics
Abstract:
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.
3
10008332
A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage
Abstract:
In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.
2
10000355
SCR-Based Advanced ESD Protection Device for Low Voltage Application
Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

1
15203
Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process
Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

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