Magneto-Optical Properties in Transparent Region of Implanted Garnet Films
We investigated magneto-optical Kerr effect in transparent region of implanted ferrite-garnet films for the (YBiCa)3(FeGe)5O12. The implantation process was carried out at room temperature by Ne+ ions with energy of 100 KeV and with various doses (0.5-2.5) 1014 ion/cm2. We discovered that slight deviation of the plane of external alternating magnetic field from plane of sample leads to appearance intensive magneto-optical maximum in transparent region of garnet films ħω=0.5-2.0 eV. In the proceeding, we have also found that the deviation of polarization plane from P- component of incident light leads to the appearance of the similar magneto-optical effects in this region. The research of magnetization processes in transparent region of garnet films showed that the formation of magneto-optical effects in region ħω=0.5-2.3 eV has a rather complex character.
Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell
This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.
Development of a Nano-Alumina-Zirconia Composite Catalyst as an Active Thin Film in Biodiesel Production
A nano-alumina-zirconia composite catalyst was synthesized by a simple aqueous sol-gel method using AlCl3.6H2O and ZrCl4 as precursors. Thermal decomposition of the precursor and subsequent formation of γ-Al2O3 and t-Zr were investigated by thermal analysis. XRD analysis showed that γ-Al2O3 and t-ZrO2 phases were formed at 700 °C. FT-IR analysis also indicated that the phase transition to γ-Al2O3 occurred in corroboration with X-ray studies. TEM analysis of the calcined powder revealed that spherical particles were in the range of 8-12 nm. The nano-alumina-zirconia composite particles were mesoporous and uniformly distributed in their crystalline phase. In order to measure the catalytic activity, esteriﬁcation reaction was carried out. Biodiesel, as a renewable fuel, was formed in a continuous packed column reactor. Free fatty acid (FFA) was esterified with ethanol in a heterogeneous catalytic reactor. It was found that the synthesized γ-Al2O3/ZrO2 composite had the potential to be used as a heterogeneous base catalyst for biodiesel production processes.
Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate
CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.
Determination of Optical Constants of Semiconductor Thin Films by Ellipsometry
Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.
Preparation of Nanophotonics LiNbO3 Thin Films and Studying Their Morphological and Structural Properties by Sol-Gel Method for Waveguide Applications
Lithium niobate (LiNbO3) nanostructures are prepared on quartz substrate by the sol-gel method. They have been deposited with different molarity concentration and annealed at 500°C. These samples are characterized and analyzed by X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM). The measured results showed an importance increasing in molarity concentrations that indicate the structure starts to become crystal, regular, homogeneous, well crystal distributed, which made it more suitable for optical waveguide application.
Peeling Behavior of Thin Elastic Films Bonded to Rigid Substrate of Random Surface Topology
We study the fracture mechanics of peeling of thin films perfectly bonded to a rigid substrate of any random surface topology using an analytical formulation. A generalized theoretical model has been developed to determine the peel strength of thin elastic films. It is demonstrated that an improvement in the peel strength can be achieved by modifying the surface characteristics of the rigid substrate. Characterization study has been performed to analyze the effect of different parameters on effective peel force from the rigid surface. Different surface profiles such as circular and sinusoidal has been considered to demonstrate the bonding characteristics of film-substrate interface. Condition for the instability in the debonding of the film is analyzed, where the localized self-debonding arises depending upon the film and surface characteristics. This study is towards improved adhesion strength of thin films to rigid substrate using different textured surfaces.
CuO Thin Films Deposition by Spray Pyrolysis: Influence of Precursor Solution Properties
CuO thin films were deposited by spray ultrasonic
pyrolysis with different precursor solution. Two staring solution slats
were used namely: copper acetate and copper chloride. The influence
of these solutions on CuO thin films proprieties of is instigated. The
X rays diffraction (XDR) analysis indicated that the films deposed
with copper acetate are amorphous however the films elaborated with
copper chloride have monoclinic structure. UV- Visible transmission
spectra showed a strong absorbance of the deposited CuO thin films
in the visible region. Electrical characterization has shown that CuO
thin films prepared with copper acetate have a higher electrical
A Compilation of Nanotechnology in Thin Film Solar Cell Devices
Nanotechnology has become the world attention in
various applications including the solar cells devices due to the
uniqueness and benefits of achieving low cost and better
performances of devices. Recently, thin film solar cells such as
Cadmium Telluride (CdTe), Copper-Indium-Gallium-diSelenide
(CIGS), Copper-Zinc-Tin-Sulphide (CZTS), and Dye-Sensitized
Solar Cells (DSSC) enhanced by nanotechnology have attracted
much attention. Thus, a compilation of nanotechnology devices
giving the progress in the solar cells has been presented. It is much
related to nanoparticles or nanocrystallines, carbon nanotubes, and
nanowires or nanorods structures.
Mechanical Properties and Microstructural Properties of CrSiN Coating
The present study deals with the characterization of
CrSiN coatings obtained by PVD magnetron sputtering systems.
CrSiN films were deposited with different Si contents, in order to
check the effect of at.% variation on the different properties of the
Cr–N system. Coatings were characterized by scanning electron
microscopy (SEM) for thickness measurements, X-ray diffraction.
Surface morphology and the roughness characteristics were explored
using AFM, Mechanicals properties, elastic and plastic deformation
resistance of thin films were investigated using nanoindentation test. We observed that the Si addition improved the hardness and the
Young’s modulus of the Cr–N system. Indeed, the hardness value is
18,56 GPa for CrSiN coatings. Besides, the Young’s modulus value
is 224,22 GPa for CrSiN coatings for Si content of 1.2 at.%.
Investigation about Structural and Optical Properties of Bulk and Thin Film of 1H-CaAlSi by Density Functional Method
Optical properties of bulk and thin film of 1H-CaAlSi for two directions (1,0,0) and (0,0,1) were studied. The calculations are carried out by Density Functional Theory (DFT) method using full potential. GGA approximation was used to calculate exchange-correlation energy. The calculations are performed by WIEN2k package. The results showed that the absorption edge is shifted backward 0.82eV in the thin film than the bulk for both directions. The static values of the real part of dielectric function for four cases were obtained. The static values of the refractive index for four cases are calculated too. The reflectivity graphs have shown an intensive difference between the reflectivity of the thin film and the bulk in the ultraviolet region.
Effect of Precursors Aging Time on the Photocatalytic Activity of ZnO Thin Films
Thin ZnO films are deposited on glass substrates via
sol–gel method and dip-coating. The films are prepared from zinc
acetate dehydrate as a starting reagent. After that the as-prepared
ZnO sol is aged for different periods (0, 1, 3, 5, 10, 15 and 30 days).
Nanocrystalline thin films are deposited from various sols. The
effect ZnO sols aging time on the structural and photocatalytic
properties of the films is studied. The films surface is studied by
Scanning Electron Microscopy. The effect of the aging time of the
starting solution is studied in the photocatalytic degradation of
Reactive Black 5 (RB5) by UV-vis spectroscopy. The experiments
are conducted upon UV-light illumination and in complete darkness.
The variation of the absorption spectra shows the degradation of RB5
dissolved in water, as a result of the reaction, occurring on the surface
of the films and promoted by UV irradiation. The initial
concentrations of dye (5, 10 and 20 ppm) and the effect of the aging
time are varied during the experiments. The results show, that the
increasing aging time of starting solution with respect to ZnO
generally promotes photocatalytic activity. The thin films obtained
from ZnO sol, which is aged 30 days have best photocatalytic
degradation of the dye (97,22%) in comparison with the freshly
prepared ones (65,92%). The samples and photocatalytic
experimental results are reproducible. Nevertheless, all films exhibit
a substantial activity in both UV light and darkness, which is
promising for the development of new ZnO photocatalysts by sol-gel
Sol-gel Synthesis and Optical Characterisation of TiO2 Thin Films for Photovoltaic Application
TiO2 thin films have been prepared by the sol-gel dipcoating
technique in order to elaborate antireflective thin films for
monocrystalline silicon (mono-Si). The titanium isopropoxyde was
chosen as a precursor with hydrochloric acid as a catalyser for
preparing a stable solution. The optical properties have been tailored
with varying the solution concentration, the withdrawn speed, and the
heat-treatment. We showed that using a TiO2 single layer with 64.5
nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si
reflection at a level lower than 3% over the broadband spectral
domains [669-834] nm and [786-1006] nm respectively. Those latter
performances are similar to the ones obtained with double layers of
low and high refractive index glasses respectively.
Performance of Nine Different Types of PV Modules in the Tropical Region
With growth of PV market in tropical region, it is necessary to investigate the performance of different types of PV technology under the tropical weather conditions. Singapore Polytechnic was funded by Economic Development Board (EDB) to set up a solar PV test-bed for the research on performance of different types of PV modules in the country. The PV test-bed installed the nine different types of PV systems that are integrated to power utility grid for monitoring and analyzing their operating performances. This paper presents the 12 months operational data of nine different PV systems and analyses on performances of installed PV systems using energy yield and performance ratio. The nine types of PV systems under test have shown their energy yields ranging from 2.67 to 3.36 kWh/kWp and their performance ratios (PRs) ranging from 70% to 88%.
Resistive Switching in TaN/AlNx/TiN Cell
Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.
Physical and Electrical Characterization of ZnO Thin Films Prepared by Sol-Gel Method
In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.
RBS Characteristic of Cd1−xZnxS Thin Film Fabricated by Vacuum Deposition Method
Cd1−xZnxS thins films have been fabricated from ZnS/CdS/ZnS multilayer thin film systems, by using the vacuum deposition method; the Rutherford backscattering (RBS) technique have been applied in order to determine the: structure, composition, depth profile, and stoichiometric of these films. The influence of the chemical and heat treatments on the produced films also have been investigated; the RBS spectra of the films showed that homogenous Cd1−xZnxS can be synthesized with x=0.45.
Tin and Tin-Copper Composite Nanorod Anodes for Rechargeable Lithium Applications
Physical vapor deposition under conditions of an obliquely incident flux results in a film formation with an inclined columnar structure. These columns will be oriented toward the vapor source because of the self-shadowing effect, and they are homogenously distributed on the substrate surface because of the limited surface diffusion ability of ad-atoms when there is no additional substrate heating.
In this work, the oblique angle electron beam evaporation technique is used to fabricate thin films containing inclined nanorods. The results demonstrate that depending on the thin film composition, the morphology of the nanorods is changed as well. The galvanostatic analysis of these thin film anodes reveals that a composite CuSn nanorods having approximately 900mAhg-1 of initial discharge capacity, performs higher electrochemical performance compared to pure Sn nanorods containing anode material. The long cycle life and the advanced electrochemical properties of the nanostructured composite electrode might be attributed to its improved mechanical tolerance and enhanced electrical conductivity depending on the Cu presence in the nanorods.
A Hybrid Differential Transform Approach for Laser Heating of a Double-Layered Thin Film
This paper adopted the hybrid differential transform approach for studying heat transfer problems in a gold/chromium thin film with an ultra-short-pulsed laser beam projecting on the gold side. The physical system, formulated based on the hyperbolic two-step heat transfer model, covers three characteristics: (i) coupling effects between the electron/lattice systems, (ii) thermal wave propagation in metals, and (iii) radiation effects along the interface. The differential transform method is used to transfer the governing equations in the time domain into the spectrum equations, which is further discretized in the space domain by the finite difference method. The results, obtained through a recursive process, show that the electron temperature in the gold film can rise up to several thousand degrees before its electron/lattice systems reach equilibrium at only several hundred degrees. The electron and lattice temperatures in the chromium film are much lower than those in the gold film.
Effect of Oxygen Annealing on the Surface Defects and Photoconductivity of Vertically Aligned ZnO Nanowire Array
Post growth annealing of solution grown ZnO
nanowire array is performed under controlled oxygen ambience. The
role of annealing over surface defects and their consequence on
dark/photo-conductivity and photosensitivity of nanowire array is
investigated. Surface defect properties are explored using various
measurement tools such as contact angle, photoluminescence, Raman
spectroscopy and XPS measurements. The contact angle of the NW
films reduces due to oxygen annealing and nanowire film surface
changes from hydrophobic (96°) to hydrophilic (16°). Raman and
XPS spectroscopy reveal that oxygen annealing improves the crystal
quality of the nanowire films. The defect band emission intensity
(relative to band edge emission, ID/IUV) reduces from 1.3 to 0.2 after
annealing at 600 °C at 10 SCCM flow of oxygen. An order
enhancement in dark conductivity is observed in O2 annealed
samples, while photoconductivity is found to be slightly reduced due
to lower concentration of surface related oxygen defects.
Vickers Indentation Simulation of Buffer Layer Thickness Effect for DLC Coated Materials
Vickers indentation is used to measure the hardness
of materials. In this study, numerical simulation of Vickers
indentation experiment was performed for Diamond like Carbon
(DLC) coated materials. DLC coatings were deposited on stainless
steel 304 substrates with Chromium buffer layer using RF Magnetron
and T-shape Filtered Cathodic Vacuum Arc Dual system The
objective of this research is to understand the elastic plastic
properties, stress strain distribution, ring and lateral crack growth and
propagation, penetration depth of indenter and delamination of
coating from substrate with effect of buffer layer thickness. The
effect of Poisson-s ratio of DLC coating was also analyzed. Indenter
penetration is more in coated materials with thin buffer layer as
compared to thicker one, under same conditions. Similarly, the
specimens with thinner buffer layer failed quickly due to high
residual stress as compared to the coated materials with reasonable
thickness of 200nm buffer layer. The simulation results suggested the
optimized thickness of 200 nm among the prepared specimens for
durable and long service.
Preparation of Nanostructure ZnO-SnO2 Thin Films for Optoelectronic Properties and Post Annealing Influence
ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were
deposited on glass substrate with varying concentrations (ZnO:SnO2
- 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash
evaporation technique. These deposited ZTO film were annealed at
450 0C in vacuum. These films were characterized to study the effect
of annealing on the structural, electrical, and optical properties.
Atomic force microscopy (AFM) and Scanning electron microscopy
(SEM) images manifest the surface morphology of these ZTO thin
films. The apparent growth of surface features revealed the formation
of nanostructure ZTO thin films. The small value of surface
roughness (root mean square RRMS) ensures the usefulness in
optical coatings. The sheet resistance was also found to be decreased
for both types of films with increasing concentration of SnO2. The
optical transmittance found to be decreased however blue shift has
been observed after annealing.
Work Function Engineering of Functionally Graded ZnO+Ga2O3 Thin Film for Solar Cell and Organic Light Emitting Diodes Applications
ZnO+Ga2O3 functionally graded thin films (FGTFs)
were examined for their potential use as Solar cell and organic light
emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO)
were fabricated by combinatorial RF magnetron sputtering. The
composition gradient was controlled up to 10% by changing the
plasma power of the two sputter guns. A Ga2O3+ZnO graded region
was placed on the top layer of ZnO. The FGTFs showed up to 80%
transmittance. Their surface resistances were reduced to < 10% by
increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work
functions could be controlled within a range of 0.18 eV. The
controlled work function is a very promising technology because it
reduces the contact resistance between the anode and Hall transport
layers of OLED and solar cell devices.
Optical and Structural Properties of a ZnS Buffer Layer Fabricated with Deposition Temperature of RF Magnetron Sputtering System
Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties
Sensing Characteristics to Acid Vapors of a TPPS Coated Fiber Optic: A Preliminary Analysis
In this work we report on preliminary analysis of a novel optoelectronic gas sensor based on an optical fiber integrated with a tetrakis(4-sulfonatophenyl)porphyrin (TPPS) thin film. The sensitive materials are selectively deposited on the core region of a fiber tip by UV light induced deposition technique. A simple and cheap process which can be easily extended to different porphyrin derivatives. When the TPPS film on the fiber tip is exposed to acid and/or base vapors, dramatic changes occur in the aggregation structure of the dye molecules in the film, from J- to H-type, resulting in a profound modification of their corresponding reflectance spectra. From the achieved experimental results it is evident that the presence of intense and narrow band peaks in the reflected spectra could be monitored to detect hazardous vapors.
Effects of Mo Thickness on the Properties of AZO/Mo/AZO Multilayer Thin Films
In this paper, we proposed the effects of Mo thickness
on the properties of AZO/Mo/AZO multilayer thin films for
opto-electronics applications. The structural, optical and electrical
properties of AZO/Mo/AZO thin films were investigated.
Optimization of the thin films coatings resulted with low resistivity of
9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of
1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible
spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95
× 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an
alternative candidate for use as a transparent electrode in solar cells
and various displays applications.
Investigation of Thin Film Cathode Prepared by Synthesized Nano Pyrite
Pyrite (FeS2) is a promising candidate for cathode
materials in batteries because of it`s high theoretical capacity, low
cost and non-toxicity. In this study, nano size iron disulfide thin film
was prepared on graphite substrate through a new method as battery
cathode. In this way, acetylene black and poly vinylidene fluoride
were used as electron conductor and binder, respectively. Fabricated
thin films were analyzed by XRD and SEM. These results and
electrochemical data confirm improvement of battery discharge
capacity in comparison with commercial type of pyrite.
Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition
The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.
Performance Enhancement of Dye-Sensitized Solar Cells by MgO Coating on TiO2 Electrodes
TiO2/MgO composite films were prepared by coating
the magnesium acetate solution in the pores of mesoporous TiO2
films using a dip coating method. Concentrations of magnesium
acetate solution were varied in a range of 1x10-4 – 1x10-1 M. The
TiO2/MgO composite films were characterized by scanning electron
microscopy (SEM), transmission electron microscropy (TEM),
electrochemical impedance spectroscopy(EIS) , transient voltage
decay and I-V test. The TiO2 films and TiO2/MgO composite films
were immersed in a 0.3 mM N719 dye solution. The Dye-sensitized
solar cells with the TiO2/MgO/N719 structure showed an optimal
concentration of magnesium acetate solution of 1x10-3 M resulting in
the MgO film estimated thickness of 0.0963 nm and giving the
maximum efficiency of 4.85%. The improved efficiency of dyesensitized
solar cell was due to the magnesium oxide film as the wide
band gap coating decays the electron back transfer to the triiodide
electrolyte and reduce charge recombination.
Fabrication and Electrical Characterization of Al/BaxSr1-xTiO3/Pt/SiO2/Si Configuration for FeFET Applications
The ferroelectric behavior of barium strontium
titanate (BST) in thin film form has been investigated in order to
study the possibility of using BST for ferroelectric gate-field effect
transistor (FeFET) for memory devices application. BST thin films
have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The
variation of the dielectric constant (ε) and tan δ with frequency have
been studied to ensure the dielectric quality of the material. The
results show that at low frequencies, ε increases as the Ba content
increases, whereas at high frequencies, it shows the opposite
variation, which is attributed to the dipole dynamics. tan δ shows low
values with a peak at the mid-frequency range. The ferroelectric
behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V
characteristics. The results show that the strength of the ferroelectric
hysteresis loop increases as the Ba content increases; this is attributed
to the grain size and dipole dynamics effect.