Open Science Research Excellence

Dong Su Kim

Publications

2

Publications

2
7827
Design of Novel SCR-based ESD Protection Device for I/O Clamp in BCD Process
Abstract:
In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.
Keywords:
ESD Protection, grounded gate NMOS (GGNMOS),low trigger voltage SCR (LVTSCR)
1
15203
Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process
Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords:
ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up