In this paper, we demonstrated a 1 × 4 silicon photonic cascaded arrayed waveguide grating, which is fabricated on a SOI wafer with a 220 nm top Si layer and a 2µm buried oxide layer. The measured on-chip transmission loss of this cascaded arrayed waveguide grating is ~ 5.6 dB, including the fiber-to-waveguide coupling loss. The adjacent crosstalk is 33.2 dB. Compared to the normal single silicon photonic arrayed waveguide grating with a crosstalk of ~ 12.5 dB, the crosstalk of this device has been dramatically increased.
The first pn-type carrier-induced silicon Bragg-grating filter is demonstrated. The extinction-ratio modulations are 11.5 dB and 10 dB with reverse and forward biases, respectively. 8-Gpbs data rate is achieved with a reverse bias.