Excellence in Research and Innovation for Humanity

Min Sun

Publications

5

Publications

5
16791
A Family of Entropies on Interval-valued Intuitionistic Fuzzy Sets and Their Applications in Multiple Attribute Decision Making
Abstract:

The entropy of intuitionistic fuzzy sets is used to indicate the degree of fuzziness of an interval-valued intuitionistic fuzzy set(IvIFS). In this paper, we deal with the entropies of IvIFS. Firstly, we propose a family of entropies on IvIFS with a parameter λ ∈ [0, 1], which generalize two entropy measures defined independently by Zhang and Wei, for IvIFS, and then we prove that the new entropy is an increasing function with respect to the parameter λ. Furthermore, a new multiple attribute decision making (MADM) method using entropy-based attribute weights is proposed to deal with the decision making situations where the alternatives on attributes are expressed by IvIFS and the attribute weights information is unknown. Finally, a numerical example is given to illustrate the applications of the proposed method.

Keywords:
Interval-valued intuitionistic fuzzy sets, intervalvalued intuitionistic fuzzy entropy, multiple attribute decision making
4
6995
A Descent-projection Method for Solving Monotone Structured Variational Inequalities
Abstract:
In this paper, a new descent-projection method with a new search direction for monotone structured variational inequalities is proposed. The method is simple, which needs only projections and some function evaluations, so its computational load is very tiny. Under mild conditions on the problem-s data, the method is proved to converges globally. Some preliminary computational results are also reported to illustrate the efficiency of the method.
Keywords:
variational inequalities, monotone function, global convergence.
3
17011
Proximal Parallel Alternating Direction Method for Monotone Structured Variational Inequalities
Abstract:

In this paper, we focus on the alternating direction method, which is one of the most effective methods for solving structured variational inequalities(VI). In fact, we propose a proximal parallel alternating direction method which only needs to solve two strongly monotone sub-VI problems at each iteration. Convergence of the new method is proved under mild assumptions. We also present some preliminary numerical results, which indicate that the new method is quite efficient.

Keywords:
structured variational inequalities, proximal point method, global convergence
2
17056
Inexact Alternating Direction Method for Variational Inequality Problems with Linear Equality Constraints
Abstract:

In this article, a new inexact alternating direction method(ADM) is proposed for solving a class of variational inequality problems. At each iteration, the new method firstly solves the resulting subproblems of ADM approximately to generate an temporal point ˜xk, and then the multiplier yk is updated to get the new iterate yk+1. In order to get xk+1, we adopt a new descent direction which is simple compared with the existing prediction-correction type ADMs. For the inexact ADM, the resulting proximal subproblem has closedform solution when the proximal parameter and inexact term are chosen appropriately. We show the efficiency of the inexact ADM numerically by some preliminary numerical experiments.

Keywords:
variational inequality problems, alternating direction method, global convergence
1
10009223
Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation
Abstract:
Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.
Keywords:
NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.