Open Science Research Excellence

Narottam Chand

Publications

7

Publications

7
3314
A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime
Abstract:
In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.
Keywords:
Gate tunneling current, analytical model, spacer dielectrics, DIBL, subthreshold slope.
6
7795
Energy Efficient Cooperative Caching in WSN
Abstract:
Wireless sensor networks (WSNs) consist of number of tiny, low cost and low power sensor nodes to monitor some physical phenomenon. The major limitation in these networks is the use of non-rechargeable battery having limited power supply. The main cause of energy consumption in such networks is communication subsystem. This paper presents an energy efficient Cluster Cooperative Caching at Sensor (C3S) based upon grid type clustering. Sensor nodes belonging to the same cluster/grid form a cooperative cache system for the node since the cost for communication with them is low both in terms of energy consumption and message exchanges. The proposed scheme uses cache admission control and utility based data replacement policy to ensure that more useful data is retained in the local cache of a node. Simulation results demonstrate that C3S scheme performs better in various performance metrics than NICoCa which is existing cooperative caching protocol for WSNs.
Keywords:
Cooperative caching, cache replacement, admission control, WSN, clustering.
5
11688
Cooperative Data Caching in WSN
Abstract:
Wireless sensor networks (WSNs) have gained tremendous attention in recent years due to their numerous applications. Due to the limited energy resource, energy efficient operation of sensor nodes is a key issue in wireless sensor networks. Cooperative caching which ensures sharing of data among various nodes reduces the number of communications over the wireless channels and thus enhances the overall lifetime of a wireless sensor network. In this paper, we propose a cooperative caching scheme called ZCS (Zone Cooperation at Sensors) for wireless sensor networks. In ZCS scheme, one-hop neighbors of a sensor node form a cooperative cache zone and share the cached data with each other. Simulation experiments show that the ZCS caching scheme achieves significant improvements in byte hit ratio and average query latency in comparison with other caching strategies.
Keywords:
Admission control, cache replacement, cooperative caching, WSN, zone cooperation
4
12195
A Distributed Weighted Cluster Based Routing Protocol for Manets
Abstract:
Mobile ad-hoc networks (MANETs) are a form of wireless networks which do not require a base station for providing network connectivity. Mobile ad-hoc networks have many characteristics which distinguish them from other wireless networks which make routing in such networks a challenging task. Cluster based routing is one of the routing schemes for MANETs in which various clusters of mobile nodes are formed with each cluster having its own clusterhead which is responsible for routing among clusters. In this paper we have proposed and implemented a distributed weighted clustering algorithm for MANETs. This approach is based on combined weight metric that takes into account several system parameters like the node degree, transmission range, energy and mobility of the nodes. We have evaluated the performance of proposed scheme through simulation in various network situations. Simulation results show that proposed scheme outperforms the original distributed weighted clustering algorithm (DWCA).
Keywords:
MANETs, Clustering, Routing, WirelessCommunication, Distributed Clustering
3
12882
Location Based Clustering in Wireless Sensor Networks
Abstract:

Due to the limited energy resources, energy efficient operation of sensor node is a key issue in wireless sensor networks. Clustering is an effective method to prolong the lifetime of energy constrained wireless sensor network. However, clustering in wireless sensor network faces several challenges such as selection of an optimal group of sensor nodes as cluster, optimum selection of cluster head, energy balanced optimal strategy for rotating the role of cluster head in a cluster, maintaining intra and inter cluster connectivity and optimal data routing in the network. In this paper, we propose a protocol supporting an energy efficient clustering, cluster head selection/rotation and data routing method to prolong the lifetime of sensor network. Simulation results demonstrate that the proposed protocol prolongs network lifetime due to the use of efficient clustering, cluster head selection/rotation and data routing.

Keywords:
Wireless sensor networks, clustering, energy efficient, localization.
2
14468
Gate Tunnel Current Calculation for NMOSFET Based on Deep Sub-Micron Effects
Abstract:

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very important especially in context of low power application. In this paper, a simple and efficient analytical model has been developed for channel and source/drain overlap region gate tunneling current through ultra thin gate oxide n-channel MOSFET with inevitable deep submicron effect (DSME).The results obtained have been verified with simulated and reported experimental results for the purpose of validation. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range. The proposed model is suitable enough to be used in circuit simulator due to its simplicity. It is observed that neglecting deep sub-micron effect may lead to large error in the calculated gate tunneling current. It is found that temperature has almost negligible effect on gate tunneling current. It is also reported that gate tunneling current reduces with the increase of gate oxide thickness. The impact of source/drain overlap length is also assessed on gate tunneling current.

Keywords:
Gate tunneling current, analytical model, gate dielectrics, non uniform poly gate doping, MOSFET, fringing field effect and image charges.
1
15954
Trap Assisted Tunneling Model for Gate Current in Nano Scale MOSFET with High-K Gate Dielectrics
Abstract:
This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.
Keywords:
Analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices.