Linear Pocket Profile based Threshold Voltage Model for sub-100 nm n-MOSFET
This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.
Linear pocket profile, pocket implantation, nMOSFET,threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).
Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET
This paper presents the doping profile measurement
and characterization technique for the pocket implanted nano scale
n-MOSFET. Scanning capacitance microscopy and atomic force
microscopy have been used to image the extent of lateral dopant
diffusion in MOS structures. The data are capacitance vs. voltage
measurements made on a nano scale device. The technique is nondestructive
when imaging uncleaved samples. Experimental data from
the published literature are presented here on actual, cleaved device
structures which clearly indicate the two-dimensional dopant profile
in terms of a spatially varying modulated capacitance signal. Firstorder
deconvolution indicates the technique has much promise for
the quantitative characterization of lateral dopant profiles. The pocket
profile is modeled assuming the linear pocket profiles at the source
and drain edges. From the model, the effective doping concentration
is found to use in modeling and simulation results of the various
parameters of the pocket implanted nano scale n-MOSFET. The
potential of the technique to characterize important device related
phenomena on a local scale is also discussed.
Linear Pocket Profile, Pocket Implanted n-MOSFET,Scanning Capacitance Microscope, Atomic Force Microscope.