Development of Quasi-Two-Dimensional Nb2O5 for Functional Electrodes of Advanced Electrochemical Systems
In recent times there has been a growing interest in the
development of quasi-two-dimensional niobium pentoxide (Nb2O5)
as a semiconductor for the potential electronic applications such as
capacitors, filtration, dye-sensitised solar cells and gas sensing
platforms. Therefore once the purpose is established, Nb2O5 can be
prepared in a number of nano- and sub-micron-structural
morphologies that include rods, wires, belts and tubes. In this study
films of Nb2O5 were prepared on gold plated silicon substrate using
spin-coating technique and subsequently by mechanical exfoliation.
The reason this method was employed was to achieve layers of less
than 15nm in thickness. The sintering temperature of the specimen
was 800oC. The morphology and structural characteristics of the
films were analyzed by Atomic Force Microscopy (AFM), Raman
Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).
Mechanical exfoliation, niobium pentoxide, quazitwo- dimensional, semiconductor, sol-gel, spin-coating, two dimensional semiconductors.
Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique
Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.
Atomic layer deposition, tungsten oxide, WO3, two-dimensional semiconductors, single fundamental layer.