A shaped single feed microstrip antenna is realized for C-Band and X-Band applications. The frequency range of C-band and X-band varies from 4 to 8 Gigahertz and 8 to 12 Gigahertz. The antenna operates under three frequency bands, one under C band and two under X-band applications. Defect on the ground called DGS (Defected Ground Structure) is made to enhance the distinctiveness of the antenna parameters. The design consists of DGS provided to improve the antenna performance. The substrate material used is of the Flame Retardant grade-4 (FR4) epoxy having high mechanical and electrical strength. The design and analysis was done using the FEM (Finite Element Method) based Ansoft HFSS (High Frequency Structural Simulator) Version 12. For the resonant frequencies of 5.21, 9.17 and 10.45, a value of reflection coefficient obtained is of -39.0, -16.0 and -30.7 dB respectively. Other constraints of antenna such as bandwidth, gain, directivity and Voltage Standing Wave Ratio (VSWR) are also conferred.
This paper draws a comparison between two microstrip patch antennas having different ground structures. The designs utilize 45 mm x 40 mm x 1.6 mm FR4 epoxy substrate (relative permittivity of 4.4 and dielectric loss tangent of 0.02) and CPW feeding technique. The design 1 uses conducting partial ground plates along the two sides of the radiating X’mas tree shaped patch. The design 2 utilizes an X’mas tree shaped slotted ground structure that features a circular radiating patch. A comparative analysis of results of both designs has been carried. The two designs are intended to serve the fixed satellite applications in X and Ku band respectively.
This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.